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An Electron Microprobe Auger Spectroscopy was applied to investigate interactions between Al film and thermally grown silicon dioxide (SiO2) in order to examine the failure occurred for very thin Al film on SiO2 surface during heating and stressing tests. It was found that the oxidation mechanism of Al film was different on Al film surface from that at the interface between Al and SiO2 during heating in vacuum at 400-500°C for 30 min. Also, the depth of penetration of Al into SiO2 was found to be unexpectedly large. As a result of stressing test, chained hillocks appeared along the direction of electron flow in the case of very thin Al film. This Phenomenon may be due to diffusion of Si into Al film by heating during device process.