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Fabrication and Characteristics of ZnO/ZnMgO Heterostructure Field-effect Transistor
- Source :
- Chinese Journal of Luminescence. 33:449-452
- Publication Year :
- 2012
- Publisher :
- Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 2012.
-
Abstract
- The characteristics of a ZnO/ZnMgO heterostructure field-effect transistor(HFET) were reported in this paper.The HFET was grown on α-plane sapphire substrate by metal-organic vapor phase epitaxy(MOVPE) technology,and was fabricated by a conventional photolithography technique combined with wet etching.The experiment results indicated that the HFET was an n-channel depletion type with a transconductance of 180 μS·mm-1 and mobility of 182 cm2·V-1·s-1 at room temperature.The property was limited by leakage current through the SiO2 gate insulator.At low temperature,the performance was improved due to the reduced leakage current.
Details
- ISSN :
- 10007032
- Volume :
- 33
- Database :
- OpenAIRE
- Journal :
- Chinese Journal of Luminescence
- Accession number :
- edsair.doi...........5df6797ad169337825441a745f32ac96