Characteristics of InGaP∕InGaAs MOS-PHEMT with Liquid Phase–Oxidized GaAs Gate Dielectric

Authors :: Feri Adriyanto
Hsien Cheng Lin
Cheng Chieh Wu
Kuan Wei Lee
Fang Ming Lee
Yeong-Her Wang
Source :: Journal of The Electrochemical Society. 158:H1225
Publication Year :: 2011
Publisher :: The Electrochemical Society, 2011.

Subjects :: Materials science
Renewable Energy, Sustainability and the Environment
business.industry
Gate dielectric
Electrical engineering
Liquid phase
High-electron-mobility transistor
Condensed Matter Physics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Materials Chemistry
Electrochemistry
Optoelectronics
business

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