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Effects of Source and Drain Resistances on Analytical Model Parameters for 20nm MOSFETs
- Source :
- IEEJ Transactions on Electronics, Information and Systems. 131:1833-1837
- Publication Year :
- 2011
- Publisher :
- Institute of Electrical Engineers of Japan (IEE Japan), 2011.
- Subjects :
- Materials science
Electrical and Electronic Engineering
Subjects
Details
- ISSN :
- 13488155 and 03854221
- Volume :
- 131
- Database :
- OpenAIRE
- Journal :
- IEEJ Transactions on Electronics, Information and Systems
- Accession number :
- edsair.doi...........5e2671bcb467863f41f75529a3117723
- Full Text :
- https://doi.org/10.1541/ieejeiss.131.1833