Cite
Improving Luminous Efficacy of The GaN-based Light-emitting Diodes by Using Different Shapes of Current Blocking Layer
MLA
刘建朋 Liu Jian-peng, et al. “Improving Luminous Efficacy of The GaN-Based Light-Emitting Diodes by Using Different Shapes of Current Blocking Layer.” Chinese Journal of Luminescence, vol. 34, Jan. 2013, pp. 480–84. EBSCOhost, https://doi.org/10.3788/fgxb20133404.0480.
APA
刘建朋 Liu Jian-peng, 朱彦旭 Zhu Yan-xu, 邓叶 Deng Ye, 徐晨 Xu Chen, 俞鑫 Yu Xin, 曹伟伟 Cao Wei-wei, & 郭伟玲 Guo Wei-ling. (2013). Improving Luminous Efficacy of The GaN-based Light-emitting Diodes by Using Different Shapes of Current Blocking Layer. Chinese Journal of Luminescence, 34, 480–484. https://doi.org/10.3788/fgxb20133404.0480
Chicago
刘建朋 Liu Jian-peng, 朱彦旭 Zhu Yan-xu, 邓叶 Deng Ye, 徐晨 Xu Chen, 俞鑫 Yu Xin, 曹伟伟 Cao Wei-wei, and 郭伟玲 Guo Wei-ling. 2013. “Improving Luminous Efficacy of The GaN-Based Light-Emitting Diodes by Using Different Shapes of Current Blocking Layer.” Chinese Journal of Luminescence 34 (January): 480–84. doi:10.3788/fgxb20133404.0480.