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Experimental study of threshold voltage shift for Si:HfO2 based ferroelectric field effect transistor
- Source :
- Nanotechnology. 32:375203
- Publication Year :
- 2021
- Publisher :
- IOP Publishing, 2021.
-
Abstract
- For a given three different Si doping concentrations at room and high temperatures, the threshold voltage shift (ΔVth) on silicon-doped hafnium-oxide-based ferroelectric field effect transistor (FeFET) is experimentally investigated. It turned out that charge trapping in the gate stack of FeFET (versus polarization switching in the gate stack of FeFET) adversely affects ΔVth. Charge trapping causes the positive ΔVth, while polarization switching causes the negative ΔVth. The dominance of polarization switching is predominantly determined by the total remnant polarization (2Pr), which can be controlled by adjusting Si doping concentration in the hafnium-oxide layer. As the Si doping concentration increases from 2.5% to 3.6%, and 5.0%, 2Prdecreases 19.8μC cm-2to 15.25μC cm-2, and 12.5μC cm-2, which leads to ΔVthof -0.8 V, -0.09 V, and +0.1 V, respectively, at room temperature. At high temperature, the effect of polarization switching is degraded due to the decreasedPr, while the effect of charge trapping is very independent of temperature. For those three different Si doping concentrations (i.e. 2.5%, 3.6%, and 5.0%), at the high temperature, ΔVthof FeFET is -0.675 V, -0.075 V, and +0.15 V, respectively. This experimental work should provide an insight for designing FeFET for memory and logic applications.
- Subjects :
- Materials science
business.industry
Mechanical Engineering
Doping
Bioengineering
02 engineering and technology
General Chemistry
Trapping
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
Ferroelectricity
0104 chemical sciences
Threshold voltage
Mechanics of Materials
Optoelectronics
General Materials Science
Field-effect transistor
Experimental work
Electrical and Electronic Engineering
0210 nano-technology
business
Polarization (electrochemistry)
AND gate
Subjects
Details
- ISSN :
- 13616528 and 09574484
- Volume :
- 32
- Database :
- OpenAIRE
- Journal :
- Nanotechnology
- Accession number :
- edsair.doi...........5ed400c4fe34ca3aaf770a05113b499c