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Enhancement-mode GaN HEMT power electronic device with low specific on resistance
- Source :
- 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).
- Publication Year :
- 2017
- Publisher :
- IEEE, 2017.
-
Abstract
- An enhancement-mode GaN HEMT on silicon substrate was obtained by using p-type GaN Cap. P-type GaN cap was obtained by Mg doping. The activation concentration of the p-GaN cap was 3e17cm−3 with a thickness of 60nm. Selective dry etching was used to fabricate the device. Back metal and substrate thinning was used for improving the cooling capacity. A threshold voltage (V h ) of 1.2V was obtained with a maximum forward gate voltage of 7V. An output current (I D ) of 12A was obtained at V D and V G were 1V and 6V, respectively. The breakdown voltage of this device was larger than 350V, and the specific on resistance was 0.45 mΩ·cm2.
- Subjects :
- 010302 applied physics
Materials science
Silicon
business.industry
Doping
chemistry.chemical_element
High-electron-mobility transistor
Substrate (electronics)
Cooling capacity
01 natural sciences
Threshold voltage
chemistry
0103 physical sciences
Optoelectronics
Breakdown voltage
Dry etching
business
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
- Accession number :
- edsair.doi...........5f5befe68cb7215af70d7cc9e1dfddd4