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Local distribution of the material composition in the V-defect region of HgCdTe epitaxial films

Authors :
D. A. Bezrodnyy
V. A. Novikov
M. V. Yakushev
S.A. Dvoretsky
D V Grigoryev
Source :
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
Publication Year :
2016
Publisher :
IEEE, 2016.

Abstract

In this paper the local distribution of the material composition in the V-defect region of HgCdTe epitaxial films is investigated. The local composition distribution is studied by the Kelvin Force Probe Microscopy method and scanning electron microscopy with energy dispersive X-ray analysis. It is demonstrated that in the V-defect region of a Hg 1−x Cd x Te epitaxial film inhomogeneous distribution of the material component composition is observed. Analysis of the obtained experimental data shows that V-defects are distinguished by an increased mercury content.

Details

Database :
OpenAIRE
Journal :
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)
Accession number :
edsair.doi...........5f65279b6176d0d35ac1c5aae353f3cb