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Local distribution of the material composition in the V-defect region of HgCdTe epitaxial films
- Source :
- 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
- Publication Year :
- 2016
- Publisher :
- IEEE, 2016.
-
Abstract
- In this paper the local distribution of the material composition in the V-defect region of HgCdTe epitaxial films is investigated. The local composition distribution is studied by the Kelvin Force Probe Microscopy method and scanning electron microscopy with energy dispersive X-ray analysis. It is demonstrated that in the V-defect region of a Hg 1−x Cd x Te epitaxial film inhomogeneous distribution of the material component composition is observed. Analysis of the obtained experimental data shows that V-defects are distinguished by an increased mercury content.
Details
- Database :
- OpenAIRE
- Journal :
- 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)
- Accession number :
- edsair.doi...........5f65279b6176d0d35ac1c5aae353f3cb