Characterization and Modeling of Three-Terminal Heterojunction Phototransistors Using an InGaP Layer for Passivation

MLA

Meng-Kai Hsu, et al. “Characterization and Modeling of Three-Terminal Heterojunction Phototransistors Using an InGaP Layer for Passivation.” IEEE Transactions on Electron Devices, vol. 52, Feb. 2005, pp. 204–10. EBSCOhost, https://doi.org/10.1109/ted.2004.842537.

APA

Meng-Kai Hsu, Shih-Wei Tan, Wen-Shiung Lour, Wei-Tien Chen, H R Chen, & An-Hung Lin. (2005). Characterization and Modeling of Three-Terminal Heterojunction Phototransistors Using an InGaP Layer for Passivation. IEEE Transactions on Electron Devices, 52, 204–210. https://doi.org/10.1109/ted.2004.842537

Chicago

Meng-Kai Hsu, Shih-Wei Tan, Wen-Shiung Lour, Wei-Tien Chen, H R Chen, and An-Hung Lin. 2005. “Characterization and Modeling of Three-Terminal Heterojunction Phototransistors Using an InGaP Layer for Passivation.” IEEE Transactions on Electron Devices 52 (February): 204–10. doi:10.1109/ted.2004.842537.