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Theoretical analysis on the energy band properties of N- and M-structure type-II superlattices
- Source :
- Superlattices and Microstructures. 145:106590
- Publication Year :
- 2020
- Publisher :
- Elsevier BV, 2020.
-
Abstract
- The electronic band structure of conventional InAs/GaSb superlattices (SLs), N- and M-structure were investigated by 8-band k·p method. A good agreement between the theoretical calculation and experimental results was obtained. Compared with the conventional structure, the band gap and effective mass of N- and M-structure both increased with the thickness of AlSb layers raising. The splitting energy between first heavy hole band (HH1) and first light hole band (LH1) increased in N-structure, but firstly raised and then reduced in M-structure. The impact of changing the position of AlSb barrier in M-structure is also studied. By altering the position of the barrier layer, the wave function overlaps can be controlled at the InAs/GaSb or GaSb/InAs interface in PN junction. By comparing the three type SLs, we found that N- and M-structure can obviously suppress dark current and enhance wave function overlap. Besides, M-structure can be more alternative in structure design.
- Subjects :
- 010302 applied physics
Materials science
Condensed matter physics
Band gap
Superlattice
Energy level splitting
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Barrier layer
Effective mass (solid-state physics)
0103 physical sciences
General Materials Science
Electrical and Electronic Engineering
0210 nano-technology
Electronic band structure
p–n junction
Dark current
Subjects
Details
- ISSN :
- 07496036
- Volume :
- 145
- Database :
- OpenAIRE
- Journal :
- Superlattices and Microstructures
- Accession number :
- edsair.doi...........5f99221d41ab9b7dd5aac3bb07c2cc07