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Noise Analysis of AlGaN/GaN MOS-HFETs with Photochemical-Vapor Deposition SiO2 Layer
- Source :
- Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
- Publication Year :
- 2004
- Publisher :
- The Japan Society of Applied Physics, 2004.
Details
- Database :
- OpenAIRE
- Journal :
- Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials
- Accession number :
- edsair.doi...........5fece9a2a1e8b4d7678188a544c69392
- Full Text :
- https://doi.org/10.7567/ssdm.2004.d-6-4