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Observation of vacancy ordering structure in GaP nanobelts

Authors :
Fu-Rong Chen
Ming San Wang
Rong Tan Huang
Gia Gia Guo
Chia Chun Chen
Ji-Jung Kai
Jin Sheng Tsai
Min Uan Yu
Gi Chia Huang
Source :
Journal of Applied Physics. 95:2015-2019
Publication Year :
2004
Publisher :
AIP Publishing, 2004.

Abstract

III–V semiconductor GaP nanobelts were synthesized with a Fe2O3 catalyst on Si substrates by thermal evaporation at high temperatures. These nanobelts, typically, have a width from 50 to 600 nm and a length of up to several hundred micrometers. Their thickness varies from 10 to 40 nm. A vacancy ordering structure was observed near the edge of the GaP nanobelts. The vacancy ordering structure was analyzed using high-resolution transmission electron microscopy, electron diffraction patterns, and computer simulation. The unit cell of the vacancy ordering structure in the GaP belt is orthorhombic with lattice parameters a=3.767 A, b=6.525 A, c=18.456 A, and α=β=γ=90°. In the [111] projection, the structure is a R3x3 120° superstructure, while in the [211] projection, it exhibits a superstructure in both the (113) and (131) planes. This defective structure can also be visualized as a long period structure with a superstructure in the (111) stacking plane.

Details

ISSN :
10897550 and 00218979
Volume :
95
Database :
OpenAIRE
Journal :
Journal of Applied Physics
Accession number :
edsair.doi...........603c033c826874d05d8aac26151cfd88
Full Text :
https://doi.org/10.1063/1.1641178