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Observation of vacancy ordering structure in GaP nanobelts
- Source :
- Journal of Applied Physics. 95:2015-2019
- Publication Year :
- 2004
- Publisher :
- AIP Publishing, 2004.
-
Abstract
- III–V semiconductor GaP nanobelts were synthesized with a Fe2O3 catalyst on Si substrates by thermal evaporation at high temperatures. These nanobelts, typically, have a width from 50 to 600 nm and a length of up to several hundred micrometers. Their thickness varies from 10 to 40 nm. A vacancy ordering structure was observed near the edge of the GaP nanobelts. The vacancy ordering structure was analyzed using high-resolution transmission electron microscopy, electron diffraction patterns, and computer simulation. The unit cell of the vacancy ordering structure in the GaP belt is orthorhombic with lattice parameters a=3.767 A, b=6.525 A, c=18.456 A, and α=β=γ=90°. In the [111] projection, the structure is a R3x3 120° superstructure, while in the [211] projection, it exhibits a superstructure in both the (113) and (131) planes. This defective structure can also be visualized as a long period structure with a superstructure in the (111) stacking plane.
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 95
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........603c033c826874d05d8aac26151cfd88
- Full Text :
- https://doi.org/10.1063/1.1641178