Strain engineering in SiGeSn/GeSn heterostructures for light emitters (Conference Presentation)

GeSn is discussed as solution to realize the dream of a group IV light source integrated on a Si chip. Sn added into a Ge lattice decreases the conduction band energies leading to a direct bandgap semiconductor band structure. However, the compressive strain increases the direct band energy imposing a large Sn content in the GeSn bulk. In spite of many difficulties regarding the growth of epitaxial GeSn alloys on Si, several hundred nm thick GeSn layers with various Sn concentrations up to 15% could be realized and used as gain material for lasers. Nowadays research concentrates on increasing the Sn content towards 20 at% as well as structural layout. The challenge here is the decreasing quality at high Sn contents and the isolation of the active layer from the mists formed at the interface with Ge/Si which increase the laser threshold. In this direction we discuss the influence on lasing and threshold of MQW SiGeSn/GeSn heterostructures with different quantum well thicknesses. Other solution proposed is the change of intrinsic strain type from compressive into tensile by introducing Si3N4 stressors and also GeSn on Insulator technology. These methods are well known in CMOS technology and can be applied to very low Sn content GeSn alloys. The discussion on the best way to reach room temperature laser is addressed both theoretical and experimental.