Stack engineering for ReRAM devices performance improvement

Al/W:AlO x /WO y /W and Pt/AlO δ /Ta 2 O 5-x /TaO y /Pt multiple layers ReRAM devices have been fabricated and carefully studied. Experimental results exhibit significant performance improvement through the insertion of AlO x layer between the switching layer and the top electrode. Operation current is remarkably reduced, ON/OFF ratio is greatly increased, and stable multi-level operations have been successfully achieved. Multiple layers stack engineering has been proved as an efficient method to improve the performances of ReRAM devices.