Characterization of reconstructed SiC(100) surfaces using soft‐x‐ray photoemission spectroscopy

The surface quality of βSiC films grown on Si(100) by chemical vapor deposition has been assessed through synchrotron photoemission measurements of the valence band and of the linewidths and surface‐induced structure in Si 2p core‐level spectra. For these n‐type samples, band bending is small on the c(2×2) and (3×2) surfaces but larger on the (2×1), which also exhibits an increased Si 2p linewidth and evidence of elemental Si patches. All three reconstructions show emission from gap states extending from the valence band maximum to the Fermi level.