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Photoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAs
- Source :
- Journal of Applied Physics. 77:1705-1709
- Publication Year :
- 1995
- Publisher :
- AIP Publishing, 1995.
-
Abstract
- GaN films were grown on (100) GaAs substrates by metalorganic chemical vapor deposition and were found to be of (200) cubic or (111) cubic/(0002) hexagonal phase. Their photoluminescence characteristics remained invariant with material phase. We report assignment of band‐edge photoluminescence near 3.36 eV and 3.15–3.31 eV in apparently cubic GaN to intrinsic/bound excitons and phonon‐assisted, donor‐acceptor pair recombination respectively, on the basis of observed temperature and intensity dependences. A free exciton energy of 3.375 eV is deduced at 6.5 K.
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 77
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........60dcf0302a054fdefa23d85619fe1a45