Monolithic integration of an AlGaN/GaN metal—insulator field-effect transistor with an ultra-low voltage-drop diode for self-protection

In this paper, we present a monolithic integration of a self-protected AlGaN/GaN metal—insulator field-effect transistor (MISFET). An integrated field-controlled diode on the drain side of the AlGaN/GaN MISFET features a self-protected function for a reverse bias. This diode takes advantage of the recessed-barrier enhancement-mode technique to realize an ultra-low voltage drop and a low turn-ON voltage. In the smart monolithic integration, this integrated diode can block a reverse bias (> 70 V/μm) and suppress the leakage current (< 5 × 10−11 A/mm). Compared with conventional monolithic integration, the numerical results show that the MISFET integrated with a field-controlled diode leads to a good performance for smart power integration. And the power loss is lower than 50% in conduction without forward current degeneration.