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Monolithic integration of an AlGaN/GaN metal—insulator field-effect transistor with an ultra-low voltage-drop diode for self-protection
- Source :
- Chinese Physics B. 21:087305
- Publication Year :
- 2012
- Publisher :
- IOP Publishing, 2012.
-
Abstract
- In this paper, we present a monolithic integration of a self-protected AlGaN/GaN metal—insulator field-effect transistor (MISFET). An integrated field-controlled diode on the drain side of the AlGaN/GaN MISFET features a self-protected function for a reverse bias. This diode takes advantage of the recessed-barrier enhancement-mode technique to realize an ultra-low voltage drop and a low turn-ON voltage. In the smart monolithic integration, this integrated diode can block a reverse bias (> 70 V/μm) and suppress the leakage current (< 5 × 10−11 A/mm). Compared with conventional monolithic integration, the numerical results show that the MISFET integrated with a field-controlled diode leads to a good performance for smart power integration. And the power loss is lower than 50% in conduction without forward current degeneration.
Details
- ISSN :
- 16741056
- Volume :
- 21
- Database :
- OpenAIRE
- Journal :
- Chinese Physics B
- Accession number :
- edsair.doi...........6131ca72e2138c69d0a97871e6443c99