Growth and Characterization of InAs 1– x Sb x with Different Sb Compositions on GaAs Substrates

InAs1–xSbx with different compositions is grown by molecular beam epitaxy on (100)-oriented semi-insulating GaAs substrates. The increase of Sb content in the epilayer results in the deterioration of crystal quality and surface morphology. Hall measurements show that the carrier concentration increases with the composition of Sb. The electron mobility decreases initially, when Sb composition exceeds a certain value, and the mobility increases slightly. In this work, we emphasize the comparison of crystal quality, surface morphology and electrical properties of epilayers with different Sb compositions.