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GeSi Nanocrystals in SiO2 Matrix with Extended Photoresponse in Near Infrared
- Source :
- 2018 International Semiconductor Conference (CAS).
- Publication Year :
- 2018
- Publisher :
- IEEE, 2018.
-
Abstract
- The films of SiGe nanocrystals in SiO 2 on Si substrate were obtained by co-sputtering Si, Ge, and SiO 2 followed by rapid thermal annealing. The films structure and morphology together with electrical and photoelectrical properties were studied by x-ray diffraction, transmission electron microscopy, current - voltage and spectral photocurrent measurements. The photocurrent spectra at 300, 200 and 100 K were correlated with results obtained from X-ray diffractograms and transmission electron microscopy. The photocurrent spectra show an extension in near infrared due to the enriching SiGe nanocrystals in Ge.
- Subjects :
- 0301 basic medicine
Diffraction
Photocurrent
Materials science
Silicon
Annealing (metallurgy)
business.industry
Near-infrared spectroscopy
chemistry.chemical_element
02 engineering and technology
021001 nanoscience & nanotechnology
Silicon-germanium
03 medical and health sciences
chemistry.chemical_compound
030104 developmental biology
chemistry
Nanocrystal
Transmission electron microscopy
Optoelectronics
0210 nano-technology
business
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2018 International Semiconductor Conference (CAS)
- Accession number :
- edsair.doi...........6205dfef3e79f64bfb6160daa27de75a