Measurement of Resistivity of Silicon Carbide by Discharge Time of Equivalent Capacitance of the Sample

According to the Classical Electrical Theory of Capacitor-to-Resistance Discharge, the Sample of Sic can Be Equivalent to a Parallel Circuit of Resistance and Capacitance. due to the High Resistance of the Wideband-Gap Semiconductors and the Long Discharge Time of the Capacitance, the Samples Resistivity can Be Calculated Manually or by Computer by Applying a Pulse Voltage to the Sample and then Accurately Measuring its Discharge Time. the Measuring Equipment Consists of Sample Stage, Pulse Generator, Charge Converter and Digital Oscilloscope. if High-Speed Data Acquisition Card and Industrial Computer are Used Instead of the Digital Oscilloscope, the Measurement Repeatability can Be Better than 1%, and the Measurement Range is within 104-1012 Ω•cm.