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Field emission cathode array with self-aligned gate electrode fabricated by silicon micromachining
- Source :
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:3544
- Publication Year :
- 2000
- Publisher :
- American Vacuum Society, 2000.
-
Abstract
- An electron emission behavior of field emission arrays based on a new bulk/surface silicon micromachining method of fabrication was studied. The process developed is simple and allows self-aligned gate electrode formation. The field emission of the emitter tips is enhanced by a 50 nm diamond-like carbon (DLC) film formed by chemical vapor deposition. Detailed Raman, Auger, and transmission electron microscopy (TEM) investigations of the deposited DLC films will be presented. Results about the presence of nanocrystalline diamond obtained with Raman spectroscopy could not be confirmed by the TEM investigations (the nanocrystalline diamond is smaller than 10 nm).
- Subjects :
- Materials science
Silicon
business.industry
General Engineering
Analytical chemistry
chemistry.chemical_element
Chemical vapor deposition
Self-aligned gate
Cathode
law.invention
Field electron emission
Surface micromachining
symbols.namesake
chemistry
Transmission electron microscopy
law
symbols
Optoelectronics
business
Raman spectroscopy
Subjects
Details
- ISSN :
- 0734211X
- Volume :
- 18
- Database :
- OpenAIRE
- Journal :
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Accession number :
- edsair.doi...........62200a3934dc45be1a64fe5caa359d70