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Initial stage of nitridation on Si(100) surface using low-energy nitrogen ion implantation
- Source :
- Surface Science. 600:3496-3501
- Publication Year :
- 2006
- Publisher :
- Elsevier BV, 2006.
-
Abstract
- The initial stage of the thermal nitridation on Si (1 0 0)-2 × 1 surface with the low-energy nitrogen ion (200 eV) implantation was studied by photoemission spectroscopy (PES). The formation of nitride was shown the different characteristics depending on the annealing temperature. The disordered surface at room temperature was changed to 2 × 1 periodicity with the low-energy electron diffraction (LEED) as increasing the nitridation temperature. By decomposition of Si 2p spectrum, we can identify the three subnitrides (Si1+, Si2+, and Si3+). By changing the take-off angle of the Si 2p, we can increase surface sensitivity and estimate that Si1+, Si2+ and Si3+ are the interface states.
- Subjects :
- Materials science
Annealing (metallurgy)
Photoemission spectroscopy
Analytical chemistry
Surfaces and Interfaces
Nitride
Condensed Matter Physics
Surface energy
Surfaces, Coatings and Films
chemistry.chemical_compound
Ion implantation
Silicon nitride
chemistry
Electron diffraction
X-ray photoelectron spectroscopy
Materials Chemistry
Subjects
Details
- ISSN :
- 00396028
- Volume :
- 600
- Database :
- OpenAIRE
- Journal :
- Surface Science
- Accession number :
- edsair.doi...........631301f13968a51e06895513bc52090e