High performance antifuse with planar double dielectrics on Si1-xGex pad for field programmable gate array applications

A new antifuse device with a planar metal/dielectric/poly-Si/sub 1-x/Ge/sub x//dielectric/metal structure has been proposed for use in FPGAs as a voltage programmable link. The device has low leakage current (/spl sim/0.01 pA/antifuse) at an operating voltage of 5 V and low on-resistance (/spl sim/13-15 /spl Omega/) with a 1 ms long 12.5 V pulse.