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Improvement of graphene scratch resistance by ion beam bombardment
- Source :
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 474:10-14
- Publication Year :
- 2020
- Publisher :
- Elsevier BV, 2020.
-
Abstract
- The main aim of the work was investigation of the graphene resistance on mechanical scratch after ion beam bombardment. The CVD graphene on the glass substrate was used. Bombardment of graphene by beams of helium and nitrogen ions of energy 100 keV was applied. Density of ion induced defects in graphene was evaluated using Raman spectroscopy. The polymer indenter was applied for scratch test. Increase of the scratch resistance of the graphene after ion beam bombardment was observed. Scratch resistance of the graphene layer increases with increasing density of defects induced by helium and nitrogen ions. The shape of graphene ribbons exfoliated during scratch test suggests that increase of graphene scratch resistance is accompanied with improvement of graphene adhesion to the substrate. It suggests that ion beam induced defects may be responsible for observed increasing of both graphene scratch resistance ad graphene adhesion to the substrate.
- Subjects :
- Nuclear and High Energy Physics
Materials science
Ion beam
02 engineering and technology
Substrate (electronics)
010402 general chemistry
01 natural sciences
Ion
law.invention
symbols.namesake
law
Composite material
skin and connective tissue diseases
Instrumentation
computer.programming_language
integumentary system
Graphene
Adhesion
021001 nanoscience & nanotechnology
eye diseases
0104 chemical sciences
Scratch
symbols
sense organs
0210 nano-technology
Raman spectroscopy
Layer (electronics)
computer
Subjects
Details
- ISSN :
- 0168583X
- Volume :
- 474
- Database :
- OpenAIRE
- Journal :
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Accession number :
- edsair.doi...........63b9a0ed46c3e42f74cd6504d44a3ed0
- Full Text :
- https://doi.org/10.1016/j.nimb.2020.04.016