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Fabrication and characterization of photonic-crystal surface-emitting lasers with triangular double-hole lattice points
- Source :
- SPIE Proceedings.
- Publication Year :
- 2017
- Publisher :
- SPIE, 2017.
-
Abstract
- Recently, W-class photonic-crystal surface-emitting lasers (PCSELs) with both a single spectrum and narrow spot beam pattern are reported. These highly coherent PCSEL properties cause a highly bright laser light that is useful for various applications. To improve the PCSEL output power, it is important to enlarge the emitting area to reduce the heat generation effect. However, multi-mode oscillation occurs in a broad emitting area because the difference in the threshold gain between the fundamental and higher modes becomes narrower as the emitting area is broadened. In this work, we fabricate PCSELs with double-hole lattice points that decrease the optical confinement to prevent multi-mode oscillation. The fabricated device, consisting of an AlGaAs/InGaAs material system designed to be oscillated at a wavelength of 940nm, has an emitting area of 300 × 300 μm 2 . In a square lattice photonic crystal whose lattice period equals the lasing wavelength embedded in PCSELs, the distance between the centers of the double hole is set to one quarter of the lasing wavelength to decrease in-plane coupling caused by interference. We confirm that this device is oscillated at the Γ point of band edge A in the photonic band structure. The peak power is more than 5 W under pulse operation at 10 A. The device has a narrow beam divergence of less than 1° and single lobe spectrum in spite of the broad emitting area, so these double-hole lattice points are an effective structure to improve the PCSEL output power.
- Subjects :
- Materials science
business.industry
Physics::Optics
02 engineering and technology
021001 nanoscience & nanotechnology
Laser
01 natural sciences
Semiconductor laser theory
law.invention
010309 optics
Wavelength
chemistry.chemical_compound
Optics
chemistry
law
Heat generation
0103 physical sciences
Optoelectronics
Photonics
0210 nano-technology
business
Electronic band structure
Indium gallium arsenide
Photonic crystal
Subjects
Details
- ISSN :
- 0277786X
- Database :
- OpenAIRE
- Journal :
- SPIE Proceedings
- Accession number :
- edsair.doi...........63f1fec61cd34154728823df8208ef78