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Determination of the electric field in 4H/3C/4H-SiC quantum wells due to spontaneous polarization in the 4H SiC matrix

Authors :
Günter Wagner
Robert P. Devaty
Wolfgang J. Choyke
Mike F. MacMillan
Ute Kaiser
Song Bai
Source :
Applied Physics Letters. 83:3171-3173
Publication Year :
2003
Publisher :
AIP Publishing, 2003.

Abstract

We report a low-temperature photoluminescence study of 4H/3C/4H-SiC single quantum wells. A quantum well consists of thirteen 3C-SiC bilayers as displayed in a high-resolution transmission electron microscope image. The optical emission energy of the quantum well is more than 200 meV below the exciton band gap of bulk 3C-SiC. A strong internal electric field on the order of 1 MV/cm leads to the large redshift of the emission energy due to the quantum-confined Stark effect. The origin of this field is discussed in terms of the spontaneous polarization difference between 3C- and 4H-SiC.

Details

ISSN :
10773118 and 00036951
Volume :
83
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........63fa05b8121d96a5a672d2cad7bdef6e
Full Text :
https://doi.org/10.1063/1.1618020