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Determination of the electric field in 4H/3C/4H-SiC quantum wells due to spontaneous polarization in the 4H SiC matrix
- Source :
- Applied Physics Letters. 83:3171-3173
- Publication Year :
- 2003
- Publisher :
- AIP Publishing, 2003.
-
Abstract
- We report a low-temperature photoluminescence study of 4H/3C/4H-SiC single quantum wells. A quantum well consists of thirteen 3C-SiC bilayers as displayed in a high-resolution transmission electron microscope image. The optical emission energy of the quantum well is more than 200 meV below the exciton band gap of bulk 3C-SiC. A strong internal electric field on the order of 1 MV/cm leads to the large redshift of the emission energy due to the quantum-confined Stark effect. The origin of this field is discussed in terms of the spontaneous polarization difference between 3C- and 4H-SiC.
- Subjects :
- Physics
Physics and Astronomy (miscellaneous)
Condensed matter physics
Quantum-confined Stark effect
Quantum point contact
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Sound amplification by stimulated emission of radiation
Condensed Matter::Materials Science
symbols.namesake
Stark effect
Quantum dot
Electro-absorption modulator
symbols
Nitrogen-vacancy center
Quantum well
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 83
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........63fa05b8121d96a5a672d2cad7bdef6e
- Full Text :
- https://doi.org/10.1063/1.1618020