Fabrication of p-MoTe2/n-MoS2 heterostructure and its electrical characterization

We demonstrate the fabrication and characterization of large-area van der Waals heterostructure array composed of chemical vapor deposition (CVD) grown multilayer (ML) 2H-MoTe 2 and single-layer (SL) 2H-MoS 2 , which exhibits excellent rectifier properties. The transfer characteristics of field-effect transistors (FETs) are also investigated. Our work acquires excellent homogeneity and device performance, which facilitates the application of two-dimensional (2D) materials in electronics.