Analysis method of diamond dislocation vectors using reflectance mode X-ray topography

X-ray topography is an effective tool for investigating dislocations in semiconductor crystals. Owing to the low X-ray absorption coefficients of light element materials such as diamond, X-rays can penetrate deep into the crystal. Thus, deep three-dimensional dislocations are projected onto a two-dimensional film, which makes dislocation analysis particularly challenging. The dislocation vectors from the films obtained using a set of the same diffraction vectors were identified using topographical and geometrical analyses. The depth and position of the dislocations in a three-dimensional crystal that was projected onto a two-dimensional film were determined using geometrical relationships. The proposed analysis method was verified by analyzing many dislocations using four diffraction films.