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Gate bias stress stability under light irradiation for indium zinc oxide thin-film transistors based on anodic aluminium oxide gate dielectrics
- Source :
- Journal of Physics D: Applied Physics. 44:455102
- Publication Year :
- 2011
- Publisher :
- IOP Publishing, 2011.
-
Abstract
- Thin-film transistors (TFTs) using indium zinc oxide as the active layer and anodic aluminium oxide (Al2O3) as the gate dielectric layer were fabricated. The device showed an electron mobility of as high as 10.1 cm2 Vā1 sā1, an on/off current ratio of as high as ā¼108, and a turn-on voltage (V on) of only ā0.5 V. Furthermore, this kind of TFTs was very stable under positive bias illumination stress. However, when the device experienced negative bias illumination stress, the threshold voltage shifted to the positive direction. It was found that the instability under negative bias illumination stress (NBIS) was due to the electrons from the Al gate trapping into the Al2O3 dielectric when exposed to the illuminated light. Using a stacked structure of Al2O3/SiO2 dielectrics, the device became more stable under NBIS.
- Subjects :
- Electron mobility
Materials science
Acoustics and Ultrasonics
business.industry
Gate dielectric
Dielectric
Condensed Matter Physics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Threshold voltage
chemistry.chemical_compound
chemistry
Gate oxide
Thin-film transistor
Aluminium oxide
Optoelectronics
Thin film
business
Subjects
Details
- ISSN :
- 13616463 and 00223727
- Volume :
- 44
- Database :
- OpenAIRE
- Journal :
- Journal of Physics D: Applied Physics
- Accession number :
- edsair.doi...........65bd124411524175aed077831063c453