Back to Search
Start Over
Improvement of Opt-Electrical Properties in GaAsN by Controlling Step Density During Chemical Beam Epitaxy Growth
- Source :
- Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
- Publication Year :
- 2009
- Publisher :
- The Japan Society of Applied Physics, 2009.
Details
- Database :
- OpenAIRE
- Journal :
- Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials
- Accession number :
- edsair.doi...........6609685380d876cef8fcc6cadded18bd
- Full Text :
- https://doi.org/10.7567/ssdm.2009.p-14-10