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Switching effect in β-rhombohedral boron

Authors :
M. Prudenziati
G. Malavasi
G. Majni
A. Lanzi
Source :
Physica Status Solidi (a). 18:651-659
Publication Year :
1973
Publisher :
Wiley, 1973.

Abstract

Switching effects have been studied in high resistivity undoped β-rhombohedral boron in the temperature range 77 to 400°K using electrical and electro-optical measurements. The data collected must be interpreted with different models describing the origin of the switching action, i.e. double injection at low temperatures (about 77 to 250°K) and thermal instability at higher temperatures (250 to 400°K). A description of the main physical events giving rise to switching for double injection in the investigated sample is given. Emission of infrared radiation in the postswitching regime due to hole—electron recombination is also reported.

Details

ISSN :
1521396X and 00318965
Volume :
18
Database :
OpenAIRE
Journal :
Physica Status Solidi (a)
Accession number :
edsair.doi...........66320d3c3b98c85be9f8b35ac80813eb
Full Text :
https://doi.org/10.1002/pssa.2210180227