A new dopant activation technique for poly-Si TFTs with a self-aligned gate-overlapped LDD structure

Authors :: K. Ohgata
Y. Mishima
Nobuo Sasaki
Source :: International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).
Publication Year :: 2002
Publisher :: IEEE, 2002.
Abstract: We proposed a new low temperature process for self-aligned gate overlapped LDD (GOLDD) poly-Si TFTs. The gate-overlapped LDD structure was self-aligned by side-etch of Al-Nd in Al-Nd/Mo gate electrode. A low temperature dopant activation was done by using H/sub 2/ ion doping after 450/spl deg/C annealing, in N/sub 2/ atmospheric. The characteristics of our GOLDD poly-Si TFT had high ON-current and low OFF-current.

Subjects :: Materials science
Silicon
Ion doping
Annealing (metallurgy)
business.industry
Doping
chemistry.chemical_element
Self-aligned gate
Dopant Activation
chemistry
Thin-film transistor
Electrode
Electronic engineering
Optoelectronics
business

Database :: OpenAIRE
Journal :: International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)
Accession number :: edsair.doi...........667a598283df00ae57421f0741fb84fd
Full Text :: https://doi.org/10.1109/iedm.2000.904293

Full Text Access

Tools