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SiC Diode Characterization using Pulsed S-Parameter Measurements
- Source :
- 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe).
- Publication Year :
- 2019
- Publisher :
- IEEE, 2019.
-
Abstract
- Considering to power converter systems, the characterization and modeling of wide band gap semiconductors at switching frequencies in the MHz area are very important. In the following a method is presented in order to characterize and build up a non-linear model for a diode at frequencies up to 500 MHz.
- Subjects :
- Materials science
Physics::Instrumentation and Detectors
business.industry
020209 energy
020208 electrical & electronic engineering
Wide-bandgap semiconductor
02 engineering and technology
Power (physics)
Characterization (materials science)
Hardware_INTEGRATEDCIRCUITS
0202 electrical engineering, electronic engineering, information engineering
Scattering parameters
Optoelectronics
Power semiconductor device
Hardware_ARITHMETICANDLOGICSTRUCTURES
business
Diode
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)
- Accession number :
- edsair.doi...........669b090af8f69f0e01a931ba0eeffeda
- Full Text :
- https://doi.org/10.23919/epe.2019.8915041