A 0.15 μm CMOS foundry technology with 0.1 μm devices for high performance applications

This paper describes a leading-edge 0.15 /spl mu/m CMOS logic foundry technology family. Advanced core devices using 20 /spl Aring/ oxides for 1.2-1.5 V operation (L/sub G min/=0.1 /spl mu/m) support high-performance CPU and graphics applications. The technology supports also low-standby power applications with 26 /spl Aring/ oxide for 1.5 V operation. Periphery circuitry for 2.5 or 3.3 V compatibility use dual 50 or 65 /spl Aring/ gate oxides respectively. AlCu with low-k (FSG) is used for the seven-level metal interconnect system with extremely tight pitch (0.39 /spl mu/m for M1 and 0.48 /spl mu/m for intermediate levels). The aggressive design rules and border-less contacts/vias render an embedded (synchronous cache) 6T SRAM cell of 3.42 /spl mu/m/sup 2/ demonstrated in a 2Mb vehicle with very high yield. The overall process reliability is also shown to meet standard industry requirements.