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AlN/GaN MISHEMTs on Si with in-situ SiN as a gate dielectric for power amplifiers in mobile SoCs
- Source :
- Applied Physics Express. 15:016503
- Publication Year :
- 2021
- Publisher :
- IOP Publishing, 2021.
-
Abstract
- AlN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) on silicon substrate using in situ SiN as gate dielectric were fabricated and their RF power performance at mobile system-on-chip (SoC) compatible voltages was measured. At a mobile SoC-compatible supply voltage of V d = 3.5 V/5 V, the 90 nm gate-length AlN/GaN MISHEMTs showed a maximum power-added efficiency of 62%/58%, a maximum output power density (P outmax) of 0.44 W mm−1/0.84 W mm−1 and a linear gain of 20 dB/19 dB at the frequency of 5 GHz. These results suggest that the in situ-SiN/AlN/GaN-on-Si MISHEMTs are promising for RF power amplifiers in 5G mobile SoC applications.
- Subjects :
- General Engineering
General Physics and Astronomy
Subjects
Details
- ISSN :
- 18820786 and 18820778
- Volume :
- 15
- Database :
- OpenAIRE
- Journal :
- Applied Physics Express
- Accession number :
- edsair.doi...........66dc52ab57d14fca968e1257b67a6fe5