Plasma‐assisted MBE growth of ZnO on GaAs substrate with a ZnSe buffer layer

ZnO thin films were grown by plasma-assisted MBE on GaAs substrates with ZnSe buffer layers. GaAs with different orientations: (001), (111) A, and (111) B were investigated. X-ray diffraction measurements showed that ZnO grown on (111) B GaAs substrates have the best structural quality. All the samples showed good optical qualities as indicated by room temperature photoluminescence measurements. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)