Back to Search
Start Over
High-Fidelity Geometric Gates with Single Ions Doped in Crystals
- Source :
- Chinese Physics Letters. 38:094203
- Publication Year :
- 2021
- Publisher :
- IOP Publishing, 2021.
Details
- ISSN :
- 17413540 and 0256307X
- Volume :
- 38
- Database :
- OpenAIRE
- Journal :
- Chinese Physics Letters
- Accession number :
- edsair.doi...........677850018a7d85fd4496bc2cadcf76e3