Vertical-Type Organic Transistors

PROBLEM TO BE SOLVED: To provide a vertical type organic transistor at a low cost wherein high operational speed and high power are realized and mass production is enabled with superior reproducibility. SOLUTION: In the vertical type organic transistor wherein a source electrode 2, a first organic semiconductor layer 3, a gate electrode 4 of a comb type or a mesh type, a second organic semiconductor layer 5, and a drain electrode 6 are formed in order, the first organic semiconductor layer 3 and the second organic semiconductor layer 5 are constituted by using different organic semiconductor material, so as to form a potential barrier on an interface of the first layer 3 and the second layer 5. The potential barrier is generated by potential energy difference of the organic semiconductor material. For example, the potential barrier can be formed by constituting the first layer 3 and the second layer 5 of the same conductivity type organic semiconductor material, or can be formed by constituting the layers 3, 5 of different conductivity type organic semiconductor material. COPYRIGHT: (C)2004,JPO