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Energy efficient computing by redox-based memristive oxide elements
- Source :
- 2016 IEEE Silicon Nanoelectronics Workshop (SNW).
- Publication Year :
- 2016
- Publisher :
- IEEE, 2016.
-
Abstract
- Redox-Based Resistive Switching Memories (ReRAM), also called nanoionic memories or memristive elements, are widely considered to provide a potential leap beyond the limits of Flash (with respect to write speed, write energies) and DRAM (with respect to scalability, retention times) as well as energy-efficient approaches to neuromorphic concepts[1].
- Subjects :
- 010302 applied physics
Hardware_MEMORYSTRUCTURES
Computer science
Oxide
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Resistive random-access memory
Flash (photography)
chemistry.chemical_compound
Neuromorphic engineering
chemistry
Resistive switching
0103 physical sciences
Scalability
Electronic engineering
0210 nano-technology
Dram
Efficient energy use
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2016 IEEE Silicon Nanoelectronics Workshop (SNW)
- Accession number :
- edsair.doi...........687676419a24d6b72bb8d5280a0c676c