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Thermal Chemical Vapor Deposition of Bis(Tertiary-Butylamino)Silane-based Silicon Nitride Thin Films
- Source :
- Journal of The Electrochemical Society. 152:G316
- Publication Year :
- 2005
- Publisher :
- The Electrochemical Society, 2005.
-
Abstract
- Sub-90 nm device design presents challenges for lowering thermal budget as well as depositing uniform and conformal thin films for front-end-of-line silicon nitride applications. Among other low-temperature precursors forsilicon nitride film deposition, bis(tertiary-butylamino)silane (BTBAS) has gained acceptance for critical applications such as spacer. This paper describes BTBAS based silicon nitride film deposition process optimization for spacer and etch stop applications. The single-wafer chamber design can control and tune the film with respect to deposition rate, film composition, wet etch rate, and film mechanical stress by adjustment of process conditions such as temperature, pressure, and gas flow rates. Computational flow and thermal simulations are employed to optimize chamber design to achieve uniform thin films.
- Subjects :
- Materials science
Renewable Energy, Sustainability and the Environment
business.industry
Nanotechnology
Nitride
Combustion chemical vapor deposition
Condensed Matter Physics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
Carbon film
Silicon nitride
chemistry
Plasma-enhanced chemical vapor deposition
Physical vapor deposition
Materials Chemistry
Electrochemistry
Optoelectronics
Deposition (phase transition)
Thin film
business
Subjects
Details
- ISSN :
- 00134651
- Volume :
- 152
- Database :
- OpenAIRE
- Journal :
- Journal of The Electrochemical Society
- Accession number :
- edsair.doi...........688057be9046bdb2dccca0cfe189fe21