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Characterization of nanotextured AlN thin films by x-ray absorption near-edge structures
- Source :
- Applied Physics Letters. 86:163113
- Publication Year :
- 2005
- Publisher :
- AIP Publishing, 2005.
-
Abstract
- AlN thin films have been grown on c-cut sapphire substrates by pulsed-laser deposition. The film epitaxially grown at 1073 K under vacuum of 5×10−4Pa was used to examine the crystallographic orientation dependence of Al K-edge x-ray absorption near-edge structures (XANES), which satisfactorily agrees with theoretical spectra obtained by first-principles calculations. The film grown at 1073 K with N2 backfill of 7×10−2Pa shows nanotextured structure with its c plane parallel to the substrate. Although the nanotexture is not evident by x-ray diffraction, XANES can unambiguously indicate the texturing. Cross-sectional high-resolution electron microscopy provides the evidence of the nanostructure.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 86
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........6899e185a33b6d6d6dfda9d6be19f1ad