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Characterization of nanotextured AlN thin films by x-ray absorption near-edge structures

Authors :
Tomoyuki Yamamoto
Takeo Suga
Teruyasu Mizoguchi
Satoru Yoshioka
Isao Tanaka
S. Kameyama
Source :
Applied Physics Letters. 86:163113
Publication Year :
2005
Publisher :
AIP Publishing, 2005.

Abstract

AlN thin films have been grown on c-cut sapphire substrates by pulsed-laser deposition. The film epitaxially grown at 1073 K under vacuum of 5×10−4Pa was used to examine the crystallographic orientation dependence of Al K-edge x-ray absorption near-edge structures (XANES), which satisfactorily agrees with theoretical spectra obtained by first-principles calculations. The film grown at 1073 K with N2 backfill of 7×10−2Pa shows nanotextured structure with its c plane parallel to the substrate. Although the nanotexture is not evident by x-ray diffraction, XANES can unambiguously indicate the texturing. Cross-sectional high-resolution electron microscopy provides the evidence of the nanostructure.

Details

ISSN :
10773118 and 00036951
Volume :
86
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........6899e185a33b6d6d6dfda9d6be19f1ad