Effects of AlGaAsSb electron supply layer for InGaAs/InAlAs metamorphic HEMTs on GaAs substrate

Authors :: Kazuhiro Nagase
Hirotaka Geka
Satoshi Yamada
Naohiro Kuze
Masato Toita
Source :: Journal of Crystal Growth. 323:522-524
Publication Year :: 2011
Publisher :: Elsevier BV, 2011.
Abstract: We studied the effects of an AlGaAsSb electron supply layer for InGaAs/InAlAs metamorphic high electron mobility transistors (mHEMTs) on GaAs substrate. By implementing an AlGaAsSb electron supply layer, we drastically improved the electron mobility of InGaAs/InAlAs heterostructures for mHEMTs. An AlGaAsSb electron supply layer for InGaAs/InAlAs heterostructures on GaAs substrates promises high-performance mHEMTs with low production cost.

Subjects :: Electron mobility
Materials science
business.industry
Doping
Heterojunction
Substrate (electronics)
High-electron-mobility transistor
Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry
Optoelectronics
business
Layer (electronics)
Quantum well
Molecular beam epitaxy

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