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Effects of AlGaAsSb electron supply layer for InGaAs/InAlAs metamorphic HEMTs on GaAs substrate
- Source :
- Journal of Crystal Growth. 323:522-524
- Publication Year :
- 2011
- Publisher :
- Elsevier BV, 2011.
-
Abstract
- We studied the effects of an AlGaAsSb electron supply layer for InGaAs/InAlAs metamorphic high electron mobility transistors (mHEMTs) on GaAs substrate. By implementing an AlGaAsSb electron supply layer, we drastically improved the electron mobility of InGaAs/InAlAs heterostructures for mHEMTs. An AlGaAsSb electron supply layer for InGaAs/InAlAs heterostructures on GaAs substrates promises high-performance mHEMTs with low production cost.
Details
- ISSN :
- 00220248
- Volume :
- 323
- Database :
- OpenAIRE
- Journal :
- Journal of Crystal Growth
- Accession number :
- edsair.doi...........68a00467472aa2de1139ace97da7cec1