Czochralski grown Ga2O3 crystals

We report on the successful growth of β-Ga2O3 single crystals using the Czochralski method. Model calculations show that the gas phase consists of Ga2O, GaO or Ga independent of the ratio of oxygen and Ar or N2. We find that for growing single crystals the evaporation has to be suppressed by a finite amount of oxygen. A CO2/Ar gas atmosphere was found to meet this requirement.