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Three Orders of Reverse Leakage Reduction by Using Supercritical CO2 Nitriding Process on GaN Quasi-Vertical Schottky Barrier Diode
- Source :
- IEEE Transactions on Electron Devices. 68:197-201
- Publication Year :
- 2021
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2021.
-
Abstract
- Surface treatment is quite vital to reduce the reverse leakage current and improve the current On–Off ratio of gallium nitride (GaN) quasi-vertical Schottky barrier diode (SBD). In this work, we report a new nondestructive low temperature supercritical CO2 fluid (SCF) nitridation technology to treat the surface of GaN and substantially reduce the leakage current of GaN quasi-vertical SBD. The X-ray photoelectron spectroscopy (XPS) reveals the increased nitriding degree and oxygen doping degree in the form of GaO x after the SCF process results in the leakage performance improvement. As a result, the defects at metal/semiconductor interface are passivated. Also, because of NH-2 and OH− generated from the SCF process, the surface peak electric field of n−GaN decreases, and thus the breakdown voltage is enhanced. The reverse leakage current density is reduced by more than three orders of magnitude from $3.7\times 10^{-{6}}$ to $3.52\times 10^{-{9}}$ A/cm2 (at −3 V) and the ON-/ OFF-current ratio is improved by three orders from $8\times 10^{{7}}$ to $5.74\times 10^{{10}}$ .
- Subjects :
- 010302 applied physics
Materials science
business.industry
Analytical chemistry
Schottky diode
Gallium nitride
01 natural sciences
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
Reverse leakage current
Semiconductor
chemistry
X-ray photoelectron spectroscopy
0103 physical sciences
Breakdown voltage
Electrical and Electronic Engineering
business
Nitriding
Leakage (electronics)
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 68
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........69511b3e5e7b9beaaa5c81b7eaaa5ae5