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A numerical model of electrical characteristics for the monolayer graphene field effect transistors
- Source :
- The European Physical Journal Applied Physics. 86:30101
- Publication Year :
- 2019
- Publisher :
- EDP Sciences, 2019.
-
Abstract
- A numerical model of carrier saturation velocity and drain current for the monolayer graphene field effect transistors (GFETs) is proposed by considering the exponential distribution of potential fluctuations in disordered graphene system. The carrier saturation velocity of GFET is investigated by the two-region model, and it is found to be affected not only by the carrier density, but also by the graphene disorder. The numerical solutions of the carrier density and carrier saturation velocity in the disordered GFETs yield clear and physical-based results. The simulated results of the drain current model show good consistency with the reported experimental data.
- Subjects :
- Materials science
business.industry
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Monolayer graphene
Electronic, Optical and Magnetic Materials
0103 physical sciences
Optoelectronics
Field-effect transistor
010306 general physics
0210 nano-technology
business
Instrumentation
Subjects
Details
- ISSN :
- 12860050 and 12860042
- Volume :
- 86
- Database :
- OpenAIRE
- Journal :
- The European Physical Journal Applied Physics
- Accession number :
- edsair.doi...........695b604afb46ec134c219f7890c87914
- Full Text :
- https://doi.org/10.1051/epjap/2019190124