Back to Search Start Over

A numerical model of electrical characteristics for the monolayer graphene field effect transistors

Authors :
Gen-Hua Liu
Piao-Rong Xu
Ai-Bin Chen
Hong-Xu Huang
Jian-Jun Li
Hui-Ying Zhou
Yong-Zhong Zhang
Xiang-Jie Xiao
Source :
The European Physical Journal Applied Physics. 86:30101
Publication Year :
2019
Publisher :
EDP Sciences, 2019.

Abstract

A numerical model of carrier saturation velocity and drain current for the monolayer graphene field effect transistors (GFETs) is proposed by considering the exponential distribution of potential fluctuations in disordered graphene system. The carrier saturation velocity of GFET is investigated by the two-region model, and it is found to be affected not only by the carrier density, but also by the graphene disorder. The numerical solutions of the carrier density and carrier saturation velocity in the disordered GFETs yield clear and physical-based results. The simulated results of the drain current model show good consistency with the reported experimental data.

Details

ISSN :
12860050 and 12860042
Volume :
86
Database :
OpenAIRE
Journal :
The European Physical Journal Applied Physics
Accession number :
edsair.doi...........695b604afb46ec134c219f7890c87914
Full Text :
https://doi.org/10.1051/epjap/2019190124