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Fully depleted SOI (FDSOI) technology

Authors :
Kangguo Cheng
Ali Khakifirooz
Source :
Science China Information Sciences. 59
Publication Year :
2016
Publisher :
Springer Science and Business Media LLC, 2016.

Abstract

Fully depleted SOI (FDSOI) has become a viable technology not only for continued CMOS scaling to 22 nm node and beyond but also for improving the performances of legacy technology when retrofitting to old technology nodes. In this paper, we provide an overview of FDSOI technology, including the benefits and challenges in FDSOI design, manufacturing, and ecosystem. We articulate that FDSOI is potential cornerstone for China to catch up and leapfrog in semiconductor technology% .

Details

ISSN :
18691919 and 1674733X
Volume :
59
Database :
OpenAIRE
Journal :
Science China Information Sciences
Accession number :
edsair.doi...........69dbcba8a2a4d5a12d239a365d7e24a4
Full Text :
https://doi.org/10.1007/s11432-016-5561-5