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Si desorption from a ß-SiC(001) surface by an oxygen flux

Authors :
Shiro Hara
Shunji Misawa
Yoshinobu Aoyagi
Sadafumi Yoshida
E. Sakuma
M. Kawai
Source :
Surface Science Letters. 278:L141-L146
Publication Year :
1992
Publisher :
Elsevier BV, 1992.

Abstract

Silicon desorption from a cubic SiC(001) surface was investigated with an oxygen gas reaction on the surface. Desorption of the topmost Si layer from a silicon-saturated surface at 1050°C is demonstrated by exposure to oxygen. The resultant carbon-terminated surface, however, gave no change in the atomic configuration with oxygen exposure, that is, oxygen acts as an atomic layer etchant not for the carbon toplayer but only for the silicon toplayer.

Details

ISSN :
01672584
Volume :
278
Database :
OpenAIRE
Journal :
Surface Science Letters
Accession number :
edsair.doi...........6ac2618ca5a9c704698bc775c88d6aab
Full Text :
https://doi.org/10.1016/0167-2584(92)90282-a