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A review of IGBT models
- Source :
- IEEE Transactions on Power Electronics. 15:1250-1266
- Publication Year :
- 2000
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2000.
-
Abstract
- In this paper, insulated gate bipolar transistor (IGBT) models published in the literature are reviewed, analyzed, compared and classified into different categories according to mathematical type, objectives, complexity, accuracy and speed. Features of the different models are listed. Different modeling criteria are discussed according to various circuit conditions, structures, thermal considerations and accuracies. Some problems and trends in IGBT modeling are discussed.
- Subjects :
- Gate turn-off thyristor
Engineering
Current injection technique
business.industry
Hardware_INTEGRATEDCIRCUITS
Electronic engineering
Electrical engineering
Gate driver
Hardware_PERFORMANCEANDRELIABILITY
Insulated-gate bipolar transistor
Electrical and Electronic Engineering
business
Hardware_LOGICDESIGN
Subjects
Details
- ISSN :
- 19410107 and 08858993
- Volume :
- 15
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Power Electronics
- Accession number :
- edsair.doi...........6af17993c5b8ad9254bcf8c2c449770b