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Forming-free resistive switching characteristics in manganese oxide and hafnium oxide devices
- Source :
- Japanese Journal of Applied Physics. 58:044001
- Publication Year :
- 2019
- Publisher :
- IOP Publishing, 2019.
Details
- ISSN :
- 13474065 and 00214922
- Volume :
- 58
- Database :
- OpenAIRE
- Journal :
- Japanese Journal of Applied Physics
- Accession number :
- edsair.doi...........6b052a31c879e807fece32f4c4ddd088
- Full Text :
- https://doi.org/10.7567/1347-4065/ab01f8