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Gallium-arsenide E- and D-MESFET device noise characteristics operated at cryogenic temperatures with ultralow drain current
- Source :
- IEEE Electron Device Letters. 9:238-240
- Publication Year :
- 1988
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1988.
-
Abstract
- The low-frequency noise characteristics of GaAs MESFETs operating at very low power and at cryogenic temperatures of 77 and 10 K as well as at room temperature are discussed. A self-aligned gate and a buried p-layer were incorporated to maximize device gain and minimize low-frequency noise. Measurements at 77 K show a noise voltage spectral density of 1.0-2.0 mu V/ square root Hz at 1.0 Hz (referred to the transistor input) with a drain current of 1.0 mu A. >
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 9
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........6b1480e182cf6c8cf6fb5add6ccd95c3